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NVD6416ANLT4G-001-VF01

NVD6416ANLT4G-001-VF01

NVD6416ANLT4G-001-VF01

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 74m Ω @ 19A, 10V ±20V 1000pF @ 25V 40nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

NVD6416ANLT4G-001-VF01 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 71W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 74m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:1243 items

NVD6416ANLT4G-001-VF01 Product Details

NVD6416ANLT4G-001-VF01 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1000pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

NVD6416ANLT4G-001-VF01 Features


a 100V drain to source voltage (Vdss)


NVD6416ANLT4G-001-VF01 Applications


There are a lot of ON Semiconductor
NVD6416ANLT4G-001-VF01 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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