Name: STB18NM60N
Brand: STMicroelectronics
SKU: STB18NM60N
Availability: InStock

new-10%

STB18NM60N

Manufacturer part number:STB18NM60N

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 13A D2PAK

Case Package:SOT-23

Datasheet:STB18NM60N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	285mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Base Part Number	STB18N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	110W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	80W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	285m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 50V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	13A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Pulsed Drain Current-Max (IDM)	52A
DS Breakdown Voltage-Min	600V
Nominal Vgs	3 V
Height	4.6mm
Length	10.75mm
Width	10.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About STB18NM60N

The STB18NM60N from STMicroelectronics is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 13A D2PAK.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the STB18NM60N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.