NTMD6N03R2G Description
In the power MOSFET, there is available of P-channel. The characteristics are similar to the N-channel MOSFET. The direction of the current and voltage polarities are in reverse direction.
NTMD6N03R2G Features
? Designed for use in low voltage, high speed switching applications
? Ultra Low On?Resistance Provides
Higher Efficiency and Extends Battery Life
? RDS(on) = 0.024 , VGS = 10 V (Typ)
? RDS(on) = 0.030 , VGS = 4.5 V (Typ)
? Miniature SOIC?8 Surface Mount Package Saves Board Space
? Diode is Characterized for Use in Bridge Circuits
? Diode Exhibits High Speed, with Soft Recovery
? AEC Q101 Qualified ? NVMD6N03R2
? These Devices are Pb?Free and are RoHS Compliant
NTMD6N03R2G Applications
? DC?DC Converters
? Computers
? Printers
? Cellular and Cordless Phones
? Disk Drives and Tape Drives
