FDS4935BZ Description
This P-channel MOSFET is designed to improve the overall efficiency of the DC/DC converter using synchronous or conventional switch PWM controllers and battery chargers.These MOSFET have faster switching speed and lower gate charge than other MOSFET with similar RDS specification.The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS4935BZ Features
¨C6.9 A, ¨C30 V
RDS(ON) = 22 m|? @ VGS = ¨C10 V
RDS(ON) = 35 m @ VGS = ¨C 4.5 V
Extended VGSS range (¨C25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremelylow RDS(ON)
High power and current handling capability
FDS4935BZ Applications
This product is general usage and suitable for many different applications.
