NTD6600NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD6600NT4G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
12A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
1.28W Ta 56.6W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
56.6W
Case Connection
DRAIN
Turn On Delay Time
10.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
146m Ω @ 6A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
75ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
12A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
44A
Avalanche Energy Rating (Eas)
72 mJ
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2158 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.068294
$4.068294
10
$3.838012
$38.38012
100
$3.620767
$362.0767
500
$3.415818
$1707.909
1000
$3.222470
$3222.47
NTD6600NT4G Product Details
NTD6600NT4G Description
NTD6600NT4G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of the NTD6600NT4G is -55°C~175°C TJ and its maximum power dissipation is 56.6W. NTD6600NT4G has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of the NTD6600NT4G is 10.5 ns and its Turn-Off Delay Time is 26 ns.
NTD6600NT4G Features
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Avalanche Energy Specified
Logic Level
Pb?Free Packages are Available
NTD6600NT4G Applications
PWM Motor Controls
Power Supplies
Converters
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