D45VH10G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 1V.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-15A).In the part, the transition frequency is 50MHz.When collector current reaches its maximum, it can reach 15A volts.
D45VH10G Features
the DC current gain for this device is 20 @ 4A 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 50MHz
D45VH10G Applications
There are a lot of ON Semiconductor D45VH10G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
