MJD200G Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.8V @ 1A, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.In extreme cases, the collector current can be as low as 5A volts.
MJD200G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200G Applications
There are a lot of ON Semiconductor MJD200G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
