MMBT589LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 30V volts that it can take.The maximum collector current is 1A volts.
MMBT589LT1G Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
MMBT589LT1G Applications
There are a lot of ON Semiconductor MMBT589LT1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
