CPH3116-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -145mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 430mV @ 10mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.420MHz is present in the transition frequency.As a result, it can handle voltages as low as 50V volts.When collector current reaches its maximum, it can reach 1A volts.
CPH3116-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -145mV
the vce saturation(Max) is 430mV @ 10mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 420MHz
CPH3116-TL-E Applications
There are a lot of ON Semiconductor CPH3116-TL-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
