NSV60601MZ4T3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As a result, the part has a transition frequency of 100MHz.The maximum collector current is 6A volts.
NSV60601MZ4T3G Features
the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 300mV @ 600mA, 6A
a transition frequency of 100MHz
NSV60601MZ4T3G Applications
There are a lot of ON Semiconductor NSV60601MZ4T3G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
