MPS751 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 1A 2V DC current gain.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -5V to gain high efficiency.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 75MHz.There is a breakdown input voltage of 80V volts that it can take.The maximum collector current is 2A volts.
MPS751 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751 Applications
There are a lot of ON Semiconductor MPS751 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
