2SA2169-TL-E Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -290mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 580mV @ 250mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A breakdown input voltage of 50V volts can be used.Collector current can be as low as 10A volts at its maximum.
2SA2169-TL-E Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of -290mV
the vce saturation(Max) is 580mV @ 250mA, 5A
the emitter base voltage is kept at 6V
2SA2169-TL-E Applications
There are a lot of ON Semiconductor 2SA2169-TL-E applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
