NSV40501UW3T2G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 400mA, 4A.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
NSV40501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 150mV @ 400mA, 4A
NSV40501UW3T2G Applications
There are a lot of ON Semiconductor NSV40501UW3T2G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
