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2N5954

2N5954

2N5954

Microsemi Corporation

2N5954 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5954 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-66
Number of Pins 3
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation4W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity PNP
Power Dissipation4W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 6A
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 20
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:203 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$42.30450$4230.45

2N5954 Product Details

2N5954 Overview


The base voltage of the emitter can be kept at 5V to achieve high efficiency.A maximum collector current of 6A volts is possible.

2N5954 Features


the emitter base voltage is kept at 5V

2N5954 Applications


There are a lot of Microsemi Corporation 2N5954 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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