MMS8050-H-TP Overview
In this device, the DC current gain is 120 @ 50mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 50mA, 500mA.In this part, there is a transition frequency of 150MHz.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MMS8050-H-TP Features
the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz
MMS8050-H-TP Applications
There are a lot of Micro Commercial Co MMS8050-H-TP applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface