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MMS8050-H-TP

MMS8050-H-TP

MMS8050-H-TP

Micro Commercial Co

MMS8050-H-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website

SOT-23

MMS8050-H-TP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 300mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 150MHz
Frequency - Transition 150MHz
Power Dissipation-Max (Abs) 0.3W
RoHS StatusROHS3 Compliant
In-Stock:133489 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.019354$0.019354
500$0.014231$7.1155
1000$0.011859$11.859
2000$0.010880$21.76
5000$0.010168$50.84
10000$0.009459$94.59
15000$0.009148$137.22
50000$0.008995$449.75

MMS8050-H-TP Product Details

MMS8050-H-TP Overview


In this device, the DC current gain is 120 @ 50mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 50mA, 500mA.In this part, there is a transition frequency of 150MHz.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MMS8050-H-TP Features


the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz

MMS8050-H-TP Applications


There are a lot of Micro Commercial Co MMS8050-H-TP applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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