NJVNJD35N04T4G Overview
This device has a DC current gain of 2000 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 20mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Parts of this part have transition frequencies of 90MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
NJVNJD35N04T4G Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 20mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 90MHz
NJVNJD35N04T4G Applications
There are a lot of ON Semiconductor NJVNJD35N04T4G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
