NSS1C201MZ4T1G Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 200mA, 2A.With the emitter base voltage set at 7V, an efficient operation can be achieved.In the part, the transition frequency is 100MHz.Breakdown input voltage is 100V volts.A maximum collector current of 2A volts is possible.
NSS1C201MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS1C201MZ4T1G Applications
There are a lot of ON Semiconductor NSS1C201MZ4T1G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
