SIGC100T60R3EX7SA1 Description
SIGC100T60R3EX7SA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC100T60R3EX7SA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC100T60R3EX7SA1 has the common source configuration.
SIGC100T60R3EX7SA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC100T60R3EX7SA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
