SIGC42T60UNX7SA2 Description
SIGC42T60UNX7SA2 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
SIGC42T60UNX7SA2 Features
Voltage - Collector Emitter Breakdown (Max): 600V
Operating Temperature: -55°C~150°C TJ
Current - Collector (Ic) (Max): 50A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
SIGC42T60UNX7SA2 Applications
Drives
