NGTB40N65IHL2WG Description
This Insulated Gate Bipolar Transistor (IGBT) NGTB40N65IHL2WG features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low-on-state voltage and minimal switching loss. The IGBT NGTB40N65IHL2WG is well-suited for half-bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free-wheeling diode with a low forward voltage.
NGTB40N65IHL2WG Features
Extremely Efficient Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
TJmax= 175°C
Soft, Fast Free Wheeling Diode
This is a Pb- -Free Device
NGTB40N65IHL2WG Applications
Inductive Heating
Soft Switching
Automotive
Body electronics & lighting
Communications equipment
