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STGP7NC60HD

STGP7NC60HD

STGP7NC60HD

STMicroelectronics

STGP7NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP7NC60HD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation80W
Current Rating14A
Base Part Number STGP7
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation80W
Input Type Standard
Turn On Delay Time18.5 ns
Transistor Application POWER CONTROL
Rise Time7ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 72 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 25A
Reverse Recovery Time 37ns
Continuous Drain Current (ID) 14A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.5V
Turn On Time25.5 ns
Test Condition 390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Continuous Collector Current 14A
Turn Off Time-Nom (toff) 221 ns
Gate Charge35nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 18.5ns/72ns
Switching Energy 95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4878 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.71000$1.71
50$1.46380$73.19
100$1.26180$126.18
500$1.05430$527.15

STGP7NC60HD Product Details

STGP7NC60HD Description

The STGP7NC60HD is a high-speed IGBT built with sophisticated PowerMESHTM technology. This method ensures a good balance between switching performance and low on-state behavior. IGBTs like the STGP7NC60HD are ideal for resonant or soft switching applications.


STGP7NC60HD Features

  • Off losses include tail current

  • Losses include diode recovery energy

  • High-frequency operation up to 70 kHz

  • Low on-voltage drop (VCE(sat))

  • Very soft ultra-fast recovery anti parallel diode


STGP7NC60HD Applications

  • High-frequency inverters

  • SMPS and PFC in both hard switch and resonant topologies

  • Motor drivers


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