STGB40H65FB Description
This STGB40H65FB is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGB40H65FB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in a safer paralleling operation.
STGB40H65FB Features
? Maximum junction temperature: TJ = 175 °C
? High speed switching series
? Minimized tail current
? Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
? Tight parameter distribution
? Safe paralleling
? Low thermal resistance
STGB40H65FB Applications
? Photovoltaic inverters
? High-frequency converters
