NGTB40N120S3WG Description
This NGTB40N120S3WG Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Ultra Field Stop Trench structure that delivers outstanding performance in demanding switching applications while minimizing switching losses. The IGBT is ideal for applications that demand a rapid switching IGBT with low VF diodes, such as phase shifted full bridges. A free-wheeling diode with a low forward voltage is included in the device.
NGTB40N120S3WG Features
? Field Stop Technology for Extremely Efficient Trenching
? TJmax = 175°C
? Reverse Diode with Low VF
? High-speed switching optimized
? These devices are free of lead.
NGTB40N120S3WG Applications
? Welding
? UPS (Uninterruptible Power Supply) (UPS)
? Motor Management
