IRGPS4067DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGPS4067DPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-274AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
750W
Number of Elements
1
Element Configuration
Single
Power Dissipation
750W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
GENERAL PURPOSE SWITCHING
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.05V
Max Collector Current
240A
Reverse Recovery Time
130 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
80 ns
Test Condition
400V, 120A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 120A
Turn Off Time-Nom (toff)
230 ns
IGBT Type
Trench
Gate Charge
240nC
Current - Collector Pulsed (Icm)
360A
Td (on/off) @ 25°C
80ns/190ns
Switching Energy
5.75mJ (on), 3.43mJ (off)
Height
20.8mm
Length
16.1mm
Width
5.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:4982 items
IRGPS4067DPBF Product Details
IRGPS4067DPBF Description
The IRGPS4067DPBF is insulated gate bipolar transistor with transistor with ultrafast soft recovery diode.
IRGPS4067DPBF Features
Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant
IRGPS4067DPBF Applications
Variable-frequency drives (VFDs), Electric cars Trains Variable-speed refrigerators Lamp ballasts Arc-welding machines Air conditioners
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