NGTB15N60S1EG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Non?Punch Through (NPT) Trench construction and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co?packaged reverse recovery diode with a low forward voltage.
NGTB15N60S1EG Features
Low Saturation Voltage Resulting in Low Conduction Loss
Low Switching Loss in Higher Frequency Applications
Soft Fast Reverse Recovery Diode
5 s Short Circuit Capability
Excellent Current versus Package Size Performance Density
This is a Pb?Free Device
NGTB15N60S1EG Applications
White Goods Appliance Motor Control
General Purpose Inverter
AC and DC Motor Control
