NGTB25N120LWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications. Offering both low on?state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.
NGTB25N120LWG Features
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
5 s Short?Circuit Capability
These are Pb?Free Devices
NGTB25N120LWG Applications
Inverter Welding Machines
Microwave Ovens
Industrial Switching
Motor Control Inverter
