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IKZ75N65EL5XKSA1

IKZ75N65EL5XKSA1

IKZ75N65EL5XKSA1

Infineon Technologies

IKZ75N65EL5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKZ75N65EL5XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-247-4
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2013
Series TrenchStop™ 5
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation536W
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 536W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 100A
Reverse Recovery Time 59 ns
Collector Emitter Breakdown Voltage650V
Turn On Time133 ns
Test Condition 400V, 75A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A
Switching Frequency50Hz
Turn Off Time-Nom (toff) 474 ns
Gate Charge436nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 120ns/275ns
Switching Energy 1.57mJ (on), 3.2mJ (off)
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:809 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.160487$12.160487
10$11.472157$114.72157
100$10.822790$1082.279
500$10.210179$5105.0895
1000$9.632245$9632.245

IKZ75N65EL5XKSA1 Product Details

IKZ75N65EL5XKSA1 Description


The IKZ75N65EL5XKSA1 is a Low VCE(sat)IGBT inTRENCHSTOPTM5 technology co-packed with RAPID1 fast and soft antiparallel diode.



IKZ75N65EL5XKSA1 Features


  • Low VCE(sat) L5 technology offering

  • Very low collector-emitter saturation voltage VCEsat

  • Best-in-Class trade-off between conduction and switching losses

  • 650V breakdown voltage

  • Low gate charge QG

  • Maximum junction temperature 175°C

  • Qualified according to JEDEC for target applications

  • Pb-free lead plating

  • RoHS compliant



IKZ75N65EL5XKSA1 Applications


  • Uninterruptible power supplies

  • Solarphotovoltaicinverters

  • Welding machines


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