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NGTB25N120FLWG

NGTB25N120FLWG

NGTB25N120FLWG

ON Semiconductor

NGTB25N120FLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB25N120FLWG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation192W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Element ConfigurationSingle
Input Type Standard
Turn On Delay Time91 ns
Power - Max 192W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 228 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 240 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2V
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A
IGBT Type Trench Field Stop
Gate Charge220nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 91ns/228ns
Switching Energy 1.5mJ (on), 950μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4076 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.384800$6.3848
10$6.023396$60.23396
100$5.682449$568.2449
500$5.360801$2680.4005
1000$5.057360$5057.36

NGTB25N120FLWG Product Details

NGTB25N120FLWG Description


The NGTB25N120FLWG IGBT features a robust and cost-effective Trench construction and provides superior performance in demanding switching applications, offering lows on state voltage and minimal switching loss.



NGTB25N120FLWG Features


  • Low Saturation Voltage using Trench with Field Stop Technology

  • Low Switching Loss Reduces System Power Dissipation

  • 10 s Short Circuit Capability

  • Low Gate Charge

  • Soft, Fast Free Wheeling Diode

  • These are Pb?Free Devices



NGTB25N120FLWG Applications


  • Solar Inverter

  • UPS Inverter


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