IRG4PC50UDPBF Description
IRG4PC50UDPBF is a gate bipolar transistor. It is designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's.
IRG4PC50UDPBF Features
? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry-standard TO-247AC package