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IRG4PC50UDPBF

IRG4PC50UDPBF

IRG4PC50UDPBF

Infineon Technologies

IRG4PC50UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC50UDPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2001
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional FeatureULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation200W
Current Rating55A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time46 ns
Transistor Application POWER CONTROL
Rise Time25ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 140 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 55A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2V
Input Capacitance4nF
Turn On Time71 ns
Test Condition 480V, 27A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 27A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 55A
Turn Off Time-Nom (toff) 370 ns
Gate Charge180nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 46ns/140ns
Switching Energy 990μJ (on), 590μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 24.99mm
Length 15.87mm
Width 5.3086mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:4679 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.34000$9.34
25$8.04600$201.15
100$6.98630$698.63
500$6.08360$3041.8

IRG4PC50UDPBF Product Details

IRG4PC50UDPBF Description


IRG4PC50UDPBF is a gate bipolar transistor. It is designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's.



IRG4PC50UDPBF Features


? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

? Industry-standard TO-247AC package


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