IRG4BC10SDPBF Description
Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offersuperior con-duction and switching performances forsoft switching applications. The device can operate inparallel configuration with exceptional avalanche capability .This device is designed for induction heating and microwaveoven.
IRG4BC10SDPBF Features
·Extremely lowvoltage [email protected]
S-Series:Minimizes power dissipation at up to3 KHz PWM frequency in inverter drivesup to4 KHz in brushless DC drives.·Very Tight Vce(on)distribution
·IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recoveryanti-paralle diodes for use in bridge configurations
·lndustry standard TO-220AB package·Lead-Free
.Generation 4 1GBTs offer highest efficiencies available
·GBTs optimized for specific application conditions*HEXFRED diodes optimized for performance with GBTsMinimized recovery characteristios require less/no snubbing
*Lower losses than MOSFET's conduction and Diode losses
IRG4BC10SDPBF Applications
? Induction Heating, Microwave Oven
