HGTP2N120CN Description
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
HGTP2N120CN Features
13A, 1200V, TC = 25oC
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
