NDS9952A Description
These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS9952A Features
N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.
P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).
High density cell architecture or a very low RDS (ON).
a surface mount package with high power and current handling capacity.
Surface-mount MOSFET with dual (N and P) channels.
NDS9952A Applications
Switching applications
