FDC6506P Description
These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
FDC6506P Features
Low gate charge (2.3nC typical)
Fast switching speed
ROHS3 Compliant
No SVHC
Lead Free
High performance trench technology for extremely low RDS(ON)
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6506P Applications
Load switch
Battery protection
Power management
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
