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EPC2101ENGRT

EPC2101ENGRT

EPC2101ENGRT

EPC

GAN TRANS ASYMMETRICAL HALF BRID

SOT-23

EPC2101ENGRT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series eGaN®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9.5A 38A
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)
RoHS StatusROHS3 Compliant
In-Stock:4301 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$4.77400$2387

About EPC2101ENGRT

The EPC2101ENGRT from EPC is a high-performance microcontroller designed for a wide range of embedded applications. This component features GAN TRANS ASYMMETRICAL HALF BRID.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EPC2101ENGRT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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