NDC7003P Description
These dual P?Channel Enhancement Mode Power Field EffectTransistors are produced using onsemi?ˉs proprietary TrenchTechnology. This very high density process has been designed tominimize on?state resistance, provide rugged and reliableperformance and fast switching. This product is particularly suited tolow voltage applications requiring a low current high side switch.
NDC7003P Features
? ?0.34 A, ?60 V RDS(ON) = 5 @ VGS = ?10 V
RDS(ON) = 7 @ VGS = ?4.5 V
? Low Gate Charge
? Fast Switching Speed
? High Performance Trench Technology for Low RDS(ON)
? SUPERSOT?6 Package: Small Footprint (72% smaller than
standard SO?8); Low Profile (1 mm Thick)
? This is a Pb?Free Device
NDC7003P Applications
This product is particularly suited tolow voltage applications requiring a low current high side switch.
