FDME1024NZT Description
The device is a single package solution designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-state resistance to achieve minimum on-loss.
FDME1024NZT Applications
Baseband Switch
Load Switch
FDME1024NZT Features
Max rps(on)=66mΩ at Vs=4.5Vlo=3.4A
Max rps(on)=86 mΩat VGs=2.5VIo=2.9 A
Max ros(on)=113 mΩ at VGs=1.8Vp=2.5A Max rpsion)=160mΩat VGs=1.5V1o=2.1 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level>1600 V(Note 3)
RoHS Compliant
