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NTHD3102CT1G

NTHD3102CT1G

NTHD3102CT1G

ON Semiconductor

NTHD3102CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTHD3102CT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface MountYES
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Max Power Dissipation600mW
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
Current Rating5.5A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTHD3102C
Pin Count8
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation600mW
Turn On Delay Time7.2 ns
Power - Max 1.1W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A 3.1A
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V
Rise Time16.9ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 16.9 ns
Turn-Off Delay Time 15.7 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 16A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.1mm
Length 3.1mm
Width 1.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7242 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.468397$1.468397
10$1.385280$13.8528
100$1.306868$130.6868
500$1.232894$616.447
1000$1.163108$1163.108

NTHD3102CT1G Product Details

NTHD3102CT1G Description


Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET?

NTHD3102CT1G Features


? Complementary N?Channel and P?Channel MOSFET

? Small Size, 40% Smaller than TSOP?6 Package

? Leadless SMD Package Provides Great Thermal Characteristics

? Leading Edge Trench Technology for Low On Resistance

? Reduced Gate Charge to Improve Switching Response

? This is a Pb?Free Device


NTHD3102CT1G Applications


? DC?DC Conversion Circuits

? Load/Power Switching

? Single or Dual Cell Li?Ion Battery Supplied Devices

? Ideal for Power Management Applications in Portable, Battery

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