MSB709-RT1G Overview
This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 7V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.As a result, it can handle voltages as low as 45V volts.A maximum collector current of 100mA volts can be achieved.
MSB709-RT1G Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
MSB709-RT1G Applications
There are a lot of ON Semiconductor MSB709-RT1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
