BST51,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.3V @ 500μA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.200MHz is present in the transition frequency.As a result, it can handle voltages as low as 60V volts.In extreme cases, the collector current can be as low as 1A volts.
BST51,135 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BST51,135 Applications
There are a lot of Nexperia USA Inc. BST51,135 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
