ZXTN25100BFHTA Overview
In this device, the DC current gain is 100 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 300mA, 3A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A breakdown input voltage of 100V volts can be used.Product package SOT-23-3 comes from the supplier.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 3A volts at its maximum.
ZXTN25100BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
the supplier device package of SOT-23-3
ZXTN25100BFHTA Applications
There are a lot of Diodes Incorporated ZXTN25100BFHTA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
