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MPSA42RLRPG

MPSA42RLRPG

MPSA42RLRPG

ON Semiconductor

MPSA42RLRPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA42RLRPG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 1998
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSA42
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
hFE Min 25
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4000 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.119530$0.11953
10$0.112764$1.12764
100$0.106382$10.6382
500$0.100360$50.18
1000$0.094679$94.679

MPSA42RLRPG Product Details

MPSA42RLRPG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.There is a transition frequency of 50MHz in the part.Single BJT transistor can take a breakdown input voltage of 300V volts.A maximum collector current of 500mA volts can be achieved.

MPSA42RLRPG Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz

MPSA42RLRPG Applications


There are a lot of ON Semiconductor MPSA42RLRPG applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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