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MPSA29G

MPSA29G

MPSA29G

ON Semiconductor

MPSA29G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA29G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSA29
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage100V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage1.2V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Continuous Collector Current 500mA
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2155 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.396360$0.39636
10$0.373925$3.73925
100$0.352759$35.2759
500$0.332791$166.3955
1000$0.313954$313.954

MPSA29G Product Details

MPSA29G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).For high efficiency, the continuous collector voltage must be kept at 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The maximum collector current is 500mA volts.

MPSA29G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 200MHz

MPSA29G Applications


There are a lot of ON Semiconductor MPSA29G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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