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2N6515RLRM

2N6515RLRM

2N6515RLRM

ON Semiconductor

2N6515RLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6515RLRM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2004
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number 2N6515
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage250V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 6V
hFE Min 35
Turn On Time-Max (ton) 200ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2603 items

2N6515RLRM Product Details

2N6515RLRM Overview


This device has a DC current gain of 45 @ 50mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 40MHz.Maximum collector currents can be below 500mA volts.

2N6515RLRM Features


the DC current gain for this device is 45 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz

2N6515RLRM Applications


There are a lot of ON Semiconductor 2N6515RLRM applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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