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TIP50-S

TIP50-S

TIP50-S

Bourns Inc.

TIP50-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP50-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Number of Elements 1
Configuration Single
Power Dissipation40W
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4329 items

TIP50-S Product Details

TIP50-S Overview


This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.In extreme cases, the collector current can be as low as 1A volts.

TIP50-S Features


the DC current gain for this device is 30 @ 300mA 10V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V

TIP50-S Applications


There are a lot of Bourns Inc. TIP50-S applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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