MPS6651 Overview
DC current gain in this device equals 50 @ 500mA 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 4V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.The maximum collector current is 1A volts.
MPS6651 Features
the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz
MPS6651 Applications
There are a lot of ON Semiconductor MPS6651 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
