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2SA1774G

2SA1774G

2SA1774G

ON Semiconductor

2SA1774G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1774G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface MountYES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation150mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-100mA
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2SA1774
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation150mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500pA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 150
Height 800μm
Length 1.65mm
Width 900μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1139 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.066477$0.066477
500$0.048880$24.44
1000$0.040733$40.733
2000$0.037370$74.74
5000$0.034925$174.625
10000$0.032489$324.89
15000$0.031420$471.3
50000$0.030895$1544.75

2SA1774G Product Details

2SA1774G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Emitter base voltages of 6V can achieve high levels of efficiency.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.In extreme cases, the collector current can be as low as 100mA volts.

2SA1774G Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz

2SA1774G Applications


There are a lot of ON Semiconductor 2SA1774G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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