2N3904RL1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 300MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
2N3904RL1 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RL1 Applications
There are a lot of ON Semiconductor 2N3904RL1 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
