MMBTA56LT1G Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
MMBTA56LT1G Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
MMBTA56LT1G Applications
Switching applications
