KSA1182YMTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -100mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.The part has a transition frequency of 200MHz.Breakdown input voltage is 30V volts.Collector current can be as low as 500mA volts at its maximum.
KSA1182YMTF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
KSA1182YMTF Applications
There are a lot of ON Semiconductor KSA1182YMTF applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
