MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Emitter base voltages of -5V can achieve high levels of efficiency.The part has a transition frequency of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.A maximum collector current of 200mA volts can be achieved.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor MMBT3906SL applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
